Optical absorption in degenerate semiconductors
Optical absorption in degenerate semiconductors
复制标题
简并半导体中的光吸收
DOI：
10.1051/jphys:019690030011-12098700
复制
发表时间：
1969
期刊：
影响因子：
--
通讯作者：
M. Combescot
中科院分区：
文献类型：
--
作者：
J. Gavoret;P. Nozières;B. Roulet;M. Combescot
. 2014研究了掺杂直接带隙半导体中的光吸收，其中导带可以被认为是简并费米系统。在一个简单的模型内处理的问题的微扰理论的方法，考虑到最终状态之间的相互作用的传导电子和由光子产生的深孔。特别注意的是俄歇过程中起着重要作用的吸收光谱的测定。它详细地示出了如何从通常的俄歇加宽的Burstein边缘连续传递到无限重的孔的共振谱特性。在任何情况下，与阈值不同的激子线都不存在。
. 2014 The optical absorption in doped direct gap semiconductors in which the conduction band may be considered as a degenerate Fermi system is studied near the Burstein edge. The problem is treated within a simple model by the methods of perturbation theory taking into account the final-state interaction between conduction electrons and the deep hole created by the photon. Particular attention is paid to Auger processes which play a fundamental role in the determination of the absorption spectrum. It is shown in detail how one passes continuously from the usual Auger broadened Burstein edge to the resonant spectrum characteristic of an infinitely heavy hole. In any case, an exciton line, distinct from the threshold, never exists.