Enhanced efficiency of segmented silicon detectors of different thicknesses after proton irradiations up to 1×1016 neq cm2

Enhanced efficiency of segmented silicon detectors of different thicknesses after proton irradiations up to 1×1016 neq cm2
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不同厚度的分段硅探测器在质子辐照至 1×1016 neq cm2 后效率提高

DOI:
10.1016/j.nima.2010.02.134
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发表时间:
2010
影响因子:
1.4
通讯作者:
M. Wormald
M. Wormald
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
G. Casse;A. Affolder;P. Allport;H. Brown;M. Wormald

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在当前所有主流高能物理实验中,硅传感器都被用作跟踪器和顶点探测器,因为它们在粒度、分辨率和速度方面都具有无与伦比的性能,而且提供的质量相对较低。目前的大型强子对撞机(Super LHC,sLHC)预期的未来升级将要求在速度和低质量方面具有类似的性能,但粒度更大,辐射耐受性提高10倍。根据sLHC的要求,人们从多个角度研究了硅探测器的辐射加固问题:不同的硅材料、不同的电极几何形状和不同的有源衬底厚度。本文给出了用薄的(140μm)和标准的p型器件制作的微带探测器的电荷收集特性。在不同的质子辐照剂量高达1×1016neqcm−2之后,这大约是位于离p-p碰撞较近距离的像素层(不包括最里面的b层)的预期最大剂量,其中硅传感器的厚度减小是一个有益的特征,因为对最内侧空间点的质量要求很低。
Silicon sensors are used as tracker and vertex detectors in all the main current high energy physics experiments because of their unsurpassed performance in terms of granularity, resolution and speed while offering relatively low mass. The anticipated future upgrade of the present Large Hadron Collider (the Super LHC, sLHC) will require similar performance in terms of speed and low mass, but with increased granularity and a factor of ten more radiation tolerance. The radiation hardening of silicon detectors, given the sLHC requirements, is being investigated from many angles: different silicon materials, different electrode geometries and varying the thickness of the active substrate. It has been proposed that possible advantages could be achieved with detectors thinner than the accepted standard of 300μm. The charge collection properties of microstrip detectors made on thin (140μm) and standard p-type devices is here presented after various proton irradiation fluences up to 1×1016neqcm−2. This is about the maximum dose expected for the pixel layers (excluding the innermost b-layer) located at the lower distance from the p–p collisions, where the reduction in thickness of the silicon sensors is a beneficial feature, due to the requirements for low mass at the innermost space points.
用于超级大型强子对撞机的强辐射分段 n-in-p 和 p-in-n 硅探测器的电荷收集效率测量
DOI: 10.1109/tns.2009.2012856
发表时间: 2009
影响因子: 1.8
作者:
Affolder A
通讯作者: Affolder A