Photo-induced fluorescence emission enhancement of azobenzene thin films
Photo-induced fluorescence emission enhancement of azobenzene thin films
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DOI：
10.1016/j.colsurfa.2007.05.050
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发表时间：
2008-02-01
影响因子：
5.2
通讯作者：
Ijiro, Kuniharu
中科院分区：
文献类型：
--
作者：
Haruta, Osamu;Matsuo, Yasutaka;Ijiro, Kuniharu
研究了偶氮苯两亲物C（12）AzoC（10）N（+）（AzoN（+））薄膜的紫外光诱导荧光增强。紫外光照射到AzoN（+）的LB膜上，发现照射区域的荧光发射增强，并且这种荧光发射与偶氮苯分子的聚集结构无关。此外，紫外光照射到浇铸膜的AzoN（+）显示，增强增加的照射时间。在365 nm处激发的荧光发生在从约400 nm至650 nm的宽波长范围内，并且发射不归因于AzoN（+）的J-聚集体。这种现象的机制尚未阐明。它可能是由偶氮苯部分的光化学反应或光诱导的特定聚集体引起的。然而，UV辐射诱导的荧光增强可以应用于光学存储器件。(C)2007 Elsevier B. V.保留所有权利。
UV irradiation-induced fluorescence enhancement of thin films composed of azobenzene amphiphiles, C(12)AzoC(10)N(+) (AzoN(+)), was investigated. UV irradiation to Langmuir-Blodgett (LB) monolayers of AzoN(+) indicated that the fluorescence emission from an irradiated area was enhanced and the emission was independent of the aggregation structures of an azobenzene moiety. Moreover, UV irradiation to cast films of AzoN(+) revealed that the enhancement was increased by increasing the irradiation time. The fluorescence by excitation at 365 nm occurred over a wide range of wavelengths from around 400 nm to 650 nm, and the emission was not attributed to the J-aggregates of AzoN(+). The mechanism for this phenomenon has not been elucidated. It may be caused by the photo-chemical reaction of the azobenzene moiety or photo-induced specific aggregates. However, UV irradiation-induced fluorescence enhancement can be applicable to optical memory devices. (C) 2007 Elsevier B.V. All rights reserved.