The Optimization of 3.3 kV 4H-SiC JBS Diodes
The Optimization of 3.3 kV 4H-SiC JBS Diodes
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DOI：
10.1109/ted.2021.3129705
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发表时间：
2022-01
影响因子：
3.1
通讯作者：
A. Renz;V. Shah;O. Vavasour;G. Baker;Yegi Bonyadi;Y. Sharma;V. Pathirana;T. Trajkovic;P. Mawby;M. Antoniou;P. Gammon
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文献类型：
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作者：
A. Renz;V. Shah;O. Vavasour;G. Baker;Yegi Bonyadi;Y. Sharma;V. Pathirana;T. Trajkovic;P. Mawby;M. Antoniou;P. Gammon
本文报告了一项全面的研究，优化了3.3千伏结势垒肖特基（JBS）二极管的关断和导通状态的特性，采用镍，钛和钼接触金属。在该设计中，在优化的终止区中使用的相同注入用于在JBS有源区中形成P区。改变P区的宽度和间距以优化器件的导通和关断状态。所有测试的二极管都显示出高阻断电压和理想的导通特性，额定电流高达2 A。然而，泄漏电流和肖特基势垒高度（SBH）被发现与肖特基p+区域的比例。没有p+区的全肖特基和具有非常宽的肖特基区的肖特基具有最低的SBH（Ni为1.61 eV，Mo为1.11 eV，Ti为0.87 eV）和最高的泄漏。那些肖特基开口最小为2 μ m的二极管具有最低的关态泄漏，但它们受到周围p+区的严重挤压，增加了它们的SBH。性能最好的JBS二极管是Ni和Mo器件，具有最窄的节距，p+注入/肖特基区域均为2 μ m宽。这些提供了最佳的平衡器件设计，具有出色的关断状态性能，同时肖特基比保证了相对较低的正向压降。
The article reports a comprehensive study optimizing the OFF- and ON-state characteristics of 3.3 kV junction barrier Schottky (JBS) diodes made using nickel, titanium, and molybdenum contact metals. In this design, the same implants used in the optimized termination region are used to form the P-regions in the JBS active area. The width and spacing of the P-regions are varied to optimize both the ON- and OFF-state of the device. All the diodes tested displayed high blocking voltages and ideal turn-on characteristics up to the rated current of 2 A. However, the leakage current and the Schottky barrier height (SBH) were found to scale with the ratio of Schottky to p+regions. Full Schottkys, without p+regions, and those with very wide Schottky regions had the lowest SBH (1.61 eV for Ni, 1.11 eV for Mo, and 0.87 eV for Ti) and the highest leakage. Those diodes with the lowest Schottky openings of $2 ~\mu \text{m}$ had the lowest OFF-state leakage, but they suffered severe pinching from the surrounding p+regions, increasing their SBH. The best performing JBS diodes were Ni and Mo devices with the narrowest pitch, with the p+implants/Schottky regions both $2 ~\mu \text{m}$ wide. These offered the best balanced device design, with excellent OFF-state performance, while the Schottky ratio guaranteed a relatively low forward voltage drop.