Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
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DOI：
10.1143/apex.4.031001
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发表时间：
2011-03-01
影响因子：
2.3
通讯作者：
Harima, Hiroshi
中科院分区：
文献类型：
--
作者：
Yang, Shibo;Miyagawa, Reina;Harima, Hiroshi
采用金属有机气相外延(MOVPE)和氢化物气相外延(HVPE)方法生长了纤锌矿AlN高结晶质量的外延薄膜。用高分辨X射线衍射仪分析了薄膜的晶格应变，用拉曼散射观察到了E-2(高)声子频率。通过对大范围晶格应变和声子峰位移的数据分析，得到了该声子模的精确的双向应力系数，-4.04+/-0.3 cm(-1)/Gpa。此外，根据双轴应力系数精确地确定了变形势常数。(C)2011年日本应用物理学会
High-crystalline-quality epitaxial films of wurtzite AlN were grown by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE). The lattice strain of the films was analyzed by high-resolution X-ray diffraction and the E-2 (high)-phonon frequency was observed by Raman scattering. Data analysis for wide ranges of lattice strains and phonon-peak shifts yielded a precise biaxial stress coefficient of this phonon mode, -4.04 +/- 0.3 cm(-1)/GPa. Furthermore, the deformation potential constant was accurately determined from the biaxial stress coefficient. (C) 2011 The Japan Society of Applied Physics