Thioether- and sulfone-functionalized dibenzopentalenes as n-channel semiconductors for organic field-effect transistors
Thioether- and sulfone-functionalized dibenzopentalenes as n-channel semiconductors for organic field-effect transistors
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DOI：
10.1039/c8tc00970h
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发表时间：
2018-05-28
影响因子：
6.4
通讯作者：
Esser, Birgit
中科院分区：
文献类型：
--
作者：
Hermann, Mathias;Wu, Ruihan;Esser, Birgit
二苯并[a，e]并环戊二烯（DBPs）作为双极型或n型半导体材料在有机场效应晶体管（OFFET）中具有广阔的应用前景。对于n沟道传导，需要低LUMO能级。此外，固态中的紧密分子堆积是有利的。在这里，我们提出了具有低至-3.47eV的LUMO能量的硫醚官能化DBP以及具有-3.94eV的LUMO能量的DBP砜。X-射线晶体学显示1-D p-堆叠或人字形包装在固体状态下与DBP核心之间的分子内距离接近。在FET测量中，两种硫代DBP和DBP砜在排列良好的晶体上显示出n沟道传导，电子迁移率高达0.18 cm 2 V-1 s（-1），是迄今为止DBP衍生物中n沟道传导的最高报告值。短的合成路线将在未来允许容易地获得用于n-通道或双极介导的各种硫代和砜-DBP。
Dibenzo[a, e]pentalenes (DBPs) are promising candidates to be used as ambipolar or n-type semiconductors in organic field-effect transistors (OFETs). For n-channel conduction, low LUMO energy levels are required. Furthermore, a close molecular packing in the solid state is advantageous. Here we present thioether-functionalized DBPs with LUMO energies down to -3.47 eV as well as a DBP sulfone with a LUMO energy of -3.94 eV. X-ray crystallography revealed 1-D p-stacking or herringbone packing in the solid state with close intramolecular distances between the DBP cores. Two thio-DBPs and the DBP sulfone showed n-channel conduction in FET measurements on well-aligned crystals with electron mobilities of up to 0.18 cm2 V-1 s(-1), to date the highest reported values for n-channel conduction in DBP derivatives. The short synthetic route will in the future allow for facile access to a variety of thio-and sulfone-DBPs for n-channel or ambipolar semiconduction.