Pentacene disproportionation during sublimation for field-effect transistors
Pentacene disproportionation during sublimation for field-effect transistors
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DOI：
10.1021/ja044586r
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发表时间：
2005-03-09
影响因子：
15
通讯作者：
Wilkins, C
中科院分区：
文献类型：
--
作者：
Roberson, LB;Kowalik, J;Wilkins, C
在中等温度下，在流动气体中，并五苯发生缩合反应，产生6，13-二氢并五苯（DHP）和一系列缩聚芳烃，包括以前未知的并五苯（PP）。该方法需要通过加热至320 ℃进行活化，并且可能被原料中发现的杂质如DHP、6，13-并五苯醌（PO）、Al或Fe催化。这些杂质还导致并五苯晶体的本征场效应迁移率（FEM）降低。随后的纯化除去了这些杂质，从而抑制了纯化产物的形成并增加了并五苯的FEM（2.2 cm（2）/Vs）。这些结果阐明了纯化的SiO2材料的固有迁移率和最佳器件性能的测量的重要性。
At moderate temperatures in flowing gas, pentacene undergoes a disproportionation reaction to produce 6,13-dihydropentacene (DHP) and a series of polycondensed aromatic hydrocarbons, including the previously unknown peripentacene (PP). The process requires activation by heating to 320 degreesC and is possibly catalyzed by impurities such as DHP, 6,13-pentacenequinone (PO), Al, or Fe found in the starting materials. These impurities also result in a decrease in the intrinsic field-effect mobility (FEM) of pentacene crystals. Subsequent purifications remove such impurities, thus inhibiting the formation of the disproportionation products and increasing the FEM of pentacene (2.2 cm(2)/Vs). These results clarify the importance of purification of semiconductive materials for measurements of intrinsic mobility and optimal device performance.