Transparent Conducting ZnO Films Prepared by Pulsed Laser Deposition Method with Varied Wavelengths
Transparent Conducting ZnO Films Prepared by Pulsed Laser Deposition Method with Varied Wavelengths
复制标题
不同波长脉冲激光沉积法制备透明导电ZnO薄膜
DOI：
10.3131/jvsj.48.172
复制
发表时间：
2005
期刊：
影响因子：
--
通讯作者：
M. Okuda
中科院分区：
文献类型：
--
作者：
H. Agura;H. Okinaka;A. Suzuki;T. Aoki;T. Matsushita;M. Okuda
利用准分子激光（λ = 193 nm）和Nd:YAG激光（λ = 266,355,532 nm）脉冲激光沉积方法，在玻璃衬底上沉积了约100 nm厚的透明导电AZO（掺1.5 wt.% Al2O3的ZnO）薄膜。在所有实验中，重复频率为10 Hz，能量密度为2 J/cm2，照射时间为10-60 min（6000-36000次）。XRD和FE-TEM观察表明，不同波长激光制备的薄膜的晶体结构存在显著差异：在532 nm处，发现整个结构被熔化。
Approximately 100-nm-thick transparent conducting AZO (ZnO doped with 1.5 wt.% Al2O3) films have been deposited on glass substrates using a pulsed laser deposition method with an ArF excimer laser (λ = 193 nm) and a Nd:YAG laser (λ = 266, 355, 532 nm). In all experiments, a repetition rate of 10 Hz, an energy density of 2 J/cm2, and an irradiation time of 10-60 min (6000-36000 shots) were used. XRD and FE-TEM observations revealed the fact that there is a remarkable difference of the crystal structures in the films fabricated with various wavelengths of the lasers: at 532 nm, it was found that the whole structure was melted.