Solid‐State Electrochemical Thermal Transistors

Solid‐State Electrochemical Thermal Transistors
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DOI:
10.1002/adfm.202214939
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发表时间:
2023-02
影响因子:
19
通讯作者:
Qian Yang;H. Cho;Zhiping Bian;Mitsuki Yoshimura;Joonhyuk Lee;H. Jeen;Jinghuang Lin;Jiake Wei;B. Feng;Y. Ikuhara;Hiromichi Ohta
Qian Yang;H. Cho;Zhiping Bian;Mitsuki Yoshimura;Joonhyuk Lee;H. Jeen;Jinghuang Lin;Jiake Wei;B. Feng;Y. Ikuhara;Hiromichi Ohta
中科院分区:
材料科学1区
文献类型:
--
作者:
Qian Yang;H. Cho;Zhiping Bian;Mitsuki Yoshimura;Joonhyuk Lee;H. Jeen;Jinghuang Lin;Jiake Wei;B. Feng;Y. Ikuhara;Hiromichi Ohta

文献摘要

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电控制热流的热晶体管作为热管理器件和声子逻辑电路已经吸引了越来越多的关注。尽管演示了几种热晶体管,但从可靠性或液体泄漏的角度来看,液体电解质的使用可能会限制应用。在本文中,展示了一种固态热晶体管,其可以在不使用任何液体的情况下以0.4的热导率(κ)的通断比电化学地控制热流。热晶体管是由上电极、钴酸锶(SrCoOx)、固体电解质和下电极构成的多层膜。在空气中在280 °C下的电化学氧化还原处理反复调节SrCoOx层的晶体结构和κ。完全氧化的钙钛矿结构的SrCoO3层显示出高κ = 3.8 W m−1 K−1,而完全减少缺陷的钙钛矿结构的SrCoO2层显示出低κ = 0.95 W m−1 K−1。目前的固态电化学热晶体管可能成为未来热管理技术的下一代器件。
Thermal transistors that electrically control heat flow have attracted growing attention as thermal management devices and phonon logic circuits. Although several thermal transistors are demonstrated, the use of liquid electrolytes may limit the application from the viewpoint of reliability or liquid leakage. Herein, a solid‐state thermal transistor that can electrochemically control the heat flow with an on‐to‐off ratio of the thermal conductivity (κ) of ≈4 without using any liquid is demonstrated. The thermal transistor is a multilayer film composed of an upper electrode, strontium cobaltite (SrCoOx), solid electrolyte, and bottom electrode. An electrochemical redox treatment at 280 °C in air repeatedly modulates the crystal structure and κ of the SrCoOx layer. The fully oxidized perovskite‐structured SrCoO3 layer shows a high κ ≈3 .8 W m−1 K−1, whereas the fully reduced defect perovskite‐structured SrCoO2 layer shows a low κ ≈ 0.95 W m−1 K−1. The present solid‐state electrochemical thermal transistor may become next‐generation devices toward future thermal management technology.