Molecular beam epitaxial growth of GaP on Si
Molecular beam epitaxial growth of GaP on Si
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Si 上 GaP 的分子束外延生长
DOI：
10.1063/1.333333
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发表时间：
1984
影响因子：
3.2
通讯作者：
M. Inada
中科院分区：
文献类型：
--
作者：
S. Wright;H. Kroemer;M. Inada
研究了分子束外延生长GaP在Si上的生长，目的是至少接近器件质量界面。在(211)取向的衬底上生长出了无反相区的层，其质量比在其他取向上生长的要高得多。提出了一个与电学数据相一致的初步能带阵列表。异质结双极晶体管的发射极注入效率高达90%，尽管有迹象表明，外延发射极层的重掺杂远远低于基极。
The molecular‐beam epitaxial growth of GaP on Si was investigated, with the aim of at least approaching device‐quality interfaces. Gallium‐primed growth on (211)‐oriented substrates yielded layers which were free of antiphase domains, and which were of much higher quality than growths on other orientations. A tentative energy‐band lineup is proposed, which is consistent with the electrical data. Heterojunction bipolar transistors were fabricated with emitter injection efficiencies up to 90%, in spite of indications that the epitaxial emitter layer was far less heavily doped than the base.