UV irradiation effects on hydrogen sensors based on SnO2 thin films fabricated by the photochemical deposition
UV irradiation effects on hydrogen sensors based on SnO2 thin films fabricated by the photochemical deposition
复制标题
DOI：
10.1016/j.sse.2011.11.024
复制
发表时间：
2012-03-01
影响因子：
1.7
通讯作者：
Ichimura, Masaya
中科院分区：
文献类型：
--
作者：
Ao, Dengbaoleer;Ichimura, Masaya
我们制造了基于 SnO2 薄膜的高灵敏度室温氢传感器。通过光化学沉积来沉积薄膜。将含有10mmol/L SnSO 4 的沉积溶液滴在基板上并用Hg弧光灯照射。在室温下，对于 0.05% H-2 + Ar 混合气体 (0.1 atm)，在 200 摄氏度下退火的样品显示电阻下降了 >10(3) 倍。通过在真空和空气中使用低压汞灯进行紫外线照射，进一步提高了灵敏度和响应速度。 (c) 2011 Elsevier Ltd. 保留所有权利。
We fabricated highly sensitive room temperature hydrogen sensors based on SnO2 films. The films were deposited by the photochemical deposition. The deposition solution containing 10 mmol/L of SnSO4 was dropped on the substrate and irradiated with light of an Hg arc lamp. The sample annealed at 200 degrees C showed resistance decrease by a factor >10(3) for a 0.05% H-2 + Ar mixed gas (0.1 atm) at room temperature. The sensitivity and response speed were further improved by UV irradiation using a low-pressure Hg lamp both in vacuum and in air. (c) 2011 Elsevier Ltd. All rights reserved.