The Optical and Electrical Characteristics of ZnS:In Thin Films Prepared by Chemical Bath Deposition Method
The Optical and Electrical Characteristics of ZnS:In Thin Films Prepared by Chemical Bath Deposition Method
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化学浴沉积法制备ZnS:In薄膜的光电特性
DOI：
10.1149/2.0041411ssl
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发表时间：
2014
影响因子：
--
通讯作者：
Hongnan Li
中科院分区：
文献类型：
--
作者：
Bo Long;Shuying Cheng;Haifang Zhou;Jie Liao;Hong Zhang;Hongjie Jia;Hongnan Li
与硫化镉（CdS）缓冲层相比，硫化锌（ZnS）缓冲层具有无毒、带隙宽等优点，是最有希望的太阳能应用材料之一。采用化学浴沉积法（CBD）生长了In掺杂0- 4at%的ZnS薄膜。X射线衍射分析表明，所有薄膜都有一个明显的峰，对应于立方ZnS的（111）面。所有的ZnS：In薄膜在可见光区具有约85%的高透射率，具有约3.60 eV的高能带隙。In掺杂样品的电阻率从未掺杂样品的106 Ω· cm降低到掺杂0.5at%的In后的104 Ω· cm。详细分析了带隙、电阻率等随In掺杂浓度的变化规律。
Zinc sulfide (ZnS) buffer layer is one of the most promising potential candidates for solar applications due to its no toxicity, wider energy bandgap compared with cadmium sulfide (CdS) buffer layers. The ZnS thin films doped with 0–4 at% In have been grown by a Chemical Bath Deposition (CBD) method. The X-ray diffraction analysis indicates that all the films show an obvious peak corresponding to (111) plane of cubic form ZnS. All the ZnS: In films have a high transmittance of about 85% in the visible region with a high energy bandgap of about 3.60 eV. The electrical resistivity of the In-doped samples is decreased from 10 6 Ω· cm (undoped sample) to 10 4 Ω· cm after doping with 0.5 at% In. The detailed analysis about the change of bandgap, resistivity and other results with the In dopant concentration would be presented and discussed.