Insulating phase of a two-dimensional electron gas in MgxZn1-xO/ZnO heterostructures below nu=(1/3)
Insulating phase of a two-dimensional electron gas in MgxZn1-xO/ZnO heterostructures below nu=(1/3)
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nu=(1/3)以下MgxZn1-xO/ZnO异质结构中二维电子气的绝缘相
DOI：
10.1103/physrevb.84.033304
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发表时间：
2011
影响因子：
3.7
通讯作者：
M.Kawasaki
中科院分区：
文献类型：
--
作者：
Y.Kozuka;A.Tsukazaki;D.Maryenko;J.Falson;S.Akasaka;K.Nakahara;S.Nakamura;A.Awaji;K.Ueno;M.Kawasaki
本文报道了MgZnO/ZnO异质界面二维电子气在26 T强磁场下的磁输运性质。高电子迁移率和低载流子密度使得能够观察到分数量子霍尔态ν1/3。对于更低的载流子密度，我们观察到从量子霍尔液体的填充因子1/3以下的绝缘体的过渡。由于ZnO中的大电子有效质量，我们建议MgZnO/ZnO异质结构是一个原型系统的高度相关的量子霍尔物理。
We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the fractional quantum Hall stateν1/3. For an even lower charge carrier density, we observe a transition from quantum Hall liquid to an insulator below the filling factor 1/3. Because of the large electron effective mass in ZnO, we suggest the MgZnO/ZnO heterostructures to be a prototype system for highly correlated quantum Hall physics.