Modulated conductive bridge memory characteristics by radio frequency input and non‐volatile switching of frequency multiplication
Modulated conductive bridge memory characteristics by radio frequency input and non‐volatile switching of frequency multiplication
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通过射频输入和倍频非易失性开关调制导电桥存储特性
DOI：
10.1049/ell2.12601
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发表时间：
2022
影响因子：
1.1
通讯作者：
Nakaoka Toshihiro
中科院分区：
文献类型：
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作者：
Yin Yifei;Uchida Chihiro;Tsukamoto Keito;Hayashi Hitoshi;Nakaoka Toshihiro
作者提出了一种基于Ag-GeTe的导电桥存储器，允许射频（RF）输入和传输。RF输入修改电阻切换特性，并且存储器设备可以切换所发射的RF波的谐波的阶次。对于低阻态（LRS）和高阻态（HRS），高于500 MHz的RF输入的透射率均高于0.5。低于500 MHz的透射率随频率降低而降低，并取决于电阻状态（LRS或HRS）。在20 MHz时，HRS的传输为0.02，而LRS的传输为0.2。RF输入为20 MHz、10 dBm时，SET电压从0.19 V修改为0.05 V，RESET电压从−0.17 V修改为−0.05 V。通过LRS传输的RF波几乎完全由基波组成，而HRS中的RF波在10 dBm下以150 MHz提供高达五阶的谐波或倍频。射频输入的热循环测量揭示了产生倍频的非线性电阻与直流电阻之间的差异。
The authors present an Ag‐GeTe‐based conductive bridge memory that allows radio frequency (RF) input and transmission. The RF input modifies the resistance switching characteristics and the memory device can switch the order of harmonics of the transmitted RF wave. The transmittance for the RF input above 500 MHz was higher than 0.5 for both the low‐resistance state (LRS) and the high‐resistance state (HRS). Below 500 MHz the transmittance decreased with decreasing frequency and depended on the resistance state (LRS or HRS). At 20 MHz, the transmission for the HRS was 0.02, while that for the LRS was 0.2. An RF input of 20 MHz at 10 dBm modified the SET voltage from 0.19 to 0.05 V, and the RESET voltage from −0.17 to −0.05 V. The RF wave transmitted through the LRS consisted almost entirely of fundamental waves, while that in the HRS provided harmonics or frequency multiplication up to the fifth order at 150 MHz at 10 dBm. Heat cycle measurements with RF input revealed the difference between the non‐linear resistance producing the frequency multiplication and the DC resistance.