Sate-space modelling and design of a 10MHz 180W class E DC/DC converter using WBG devices

Sate-space modelling and design of a 10MHz 180W class E DC/DC converter using WBG devices
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DOI:
10.1109/apec.2018.8341433
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发表时间:
2018-03
期刊:
2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
影响因子:
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通讯作者:
S. Aldhaher;P. Mitcheson
S. Aldhaher;P. Mitcheson
中科院分区:
其他
文献类型:
--
作者:
S. Aldhaher;P. Mitcheson

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本文介绍了一种与负载无关的E类DC/DC变换器的建模和设计。与负载无关的E类电路能够在任何负载值下保持零电压开关(ZVS),而无需调谐或使用反馈回路,同时实现恒定幅度的交流电压。这使得转换器能够在变化的负载条件下保持高效运行并具有固有的调节输出。当与宽带隙(WBG)器件(如GaN和SiC)一起使用时,负载无关的E类电路可以在数十兆赫(MHz)下高效工作,因此现在可以实现高功率密度的“信用卡”大小的转换器。在此,我们将介绍一款180 W负载无关型E类升压转换器,开关频率为10 MHz,完全在采用GaN和SiC器件的铝芯PCB上实现。
This paper describes the modelling and design of a load-independent Class E DC/DC converter. Load-independent Class E circuits are able to maintain zero-voltage switching (ZVS) for any load value without requiring tuning or use of a feedback loop, and simultaneously achieve a constant amplitude AC voltage. This gives the ability for converters to maintain efficient operation and have inherently regulated outputs under varying load conditions. When used with wide-bandgap (WBG) devices, such as GaN and SiC, load-independent Class E circuits can operate efficiently at tens of megahertz (MHz) thus high power density ‘credit card’ sized converters can now be realised. Here we will present a 180 W capable load-independent Class E boost converter switching at 10 MHz and implemented entirely on a aluminium-core PCB with GaN and SiC devices.