Microstructure and temperature coefficient of resistivity for ZnO ceramics doped with Al2O3
Microstructure and temperature coefficient of resistivity for ZnO ceramics doped with Al2O3
复制标题
DOI：
10.1016/j.matlet.2006.01.030
复制
发表时间：
2006-09
影响因子：
3
通讯作者：
Yongheng Zhang;Juan Han
中科院分区：
文献类型：
--
作者：
Yongheng Zhang;Juan Han
The ZnO doped with Al2O3showed the minimum electrical resistivity at an Al2O3content of 0.25%. It was found that the ZnO doped with Al2O3exhibited the resistance-temperature characteristic reversion from negative temperature coefficient of electrical resistivity (NTCR) to positive temperature coefficient of electrical resistivity (PTCR) at temperatures of about 450 and 250°C for ceramics sintered at 1400 and 1300°C, respectively. Both NTCR and PTCR features were weakened for samples with lower Al2O3content or sintered at a higher temperature. Microstructure studies exposed that the densification process was significantly depressed when the Al2O3addition levels were over about 1%.
