Inductively coupled plasma etching of GaN and its effect on electrical characteristics
Inductively coupled plasma etching of GaN and its effect on electrical characteristics
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DOI：
10.1116/1.1421543
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发表时间：
2001-12
影响因子：
1.4
通讯作者：
B. Rong;E. V. Drift;R. Reeves;W. Sloof;R. Cheung
中科院分区：
文献类型：
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作者：
B. Rong;E. V. Drift;R. Reeves;W. Sloof;R. Cheung
在使用SF6/N2等离子体的GaN的电感耦合等离子体处理中的干法蚀刻行为已被发现是高度离子诱导的，具有约100 eV的离子能量阈值。蚀刻速率的温度依赖性表明一个小的动力学组件。最大蚀刻速率为67 nm/min，具有良好的各向异性。对于500-1000 W之间的ICP源功率观察到最有效的蚀刻方案，其中蚀刻机制是离子限制的。与反应离子刻蚀引起的损伤行为相反，在较高的直流偏置条件（300 V）下获得了几乎理想的二极管。X射线光电子能谱和原子力显微镜的研究表明，光滑的表面与最小的表面污染，再加上在衬底表面上的N的掺入有助于产生理想的二极管在300 V的表面上蚀刻的侧壁耗尽被发现是在65 nm的范围内，在给定的SF6/N2等离子体工艺条件。
Dry etch behavior in the inductively coupled plasma processing of GaN using SF6/N2 plasma has been found to be highly ion induced with an ion energy threshold of about 100 eV. Temperature dependence of the etch rate indicates a small kinetic component. Maximum etch rate of 67 nm/min and good anisotropy have been demonstrated. The most efficient etch regime is observed for an ICP source power between 500–1000 W where the etch mechanism is ion limited. In contrast to reactive ion etching induced damage behavior, almost ideal diodes are obtained at the higher dc bias condition (300 V). X-ray photoelectron spectroscopy and atomic force microscopy studies indicate that smooth surface with minimal surface contamination, coupled with the incorporation of N on the substrate surface help to produce ideal diodes on surfaces etched at 300 V. Sidewall depletion is found to be in the range of 65 nm at the given SF6/N2 plasma process conditions.