MEASUREMENT OF THE OXYGEN AND IMPURITY DISTRIBUTION IN POLYCRYSTALLINE ALUMINUM NITRIDE WITH SECONDARY ION MASS-SPECTROMETRY
MEASUREMENT OF THE OXYGEN AND IMPURITY DISTRIBUTION IN POLYCRYSTALLINE ALUMINUM NITRIDE WITH SECONDARY ION MASS-SPECTROMETRY
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DOI:
10.1111/j.1151-2916.1992.tb04414.x
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发表时间:
1992-12-01
影响因子:
3.9
通讯作者:
CHOUDHURY, A
中科院分区:
文献类型:
--
作者:
POTTER, GE;KNUDSEN, AK;CHOUDHURY, A
The lattice oxygen content in sintered polycrystalline aluminum nitride substrates was measured via secondary ion mass spectrometry (SIMS). This was achieved by quantitative analysis of spatial and depth-resolved ion images of polished. specimens using the solid-state standard addition method. The thermal conductivity of the polycrystalline material, measured with the laser flash technique, was found to be strongly correlated with the oxygen content in the AlN grains. This dependence is similar to that observed in single-crystal studies and is consistent with the phonon scattering model of AlN thermal conductivity. Scanning electron microscopy and SIMS images of a variety of other species (C, F, Cl, Y, Si, and Ca) were also obtained. In general, impurities were localized within second-phase regions although calcium was also found to be distributed uniformly along AlN grain boundaries. Other impurity constituents are also discussed.