Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
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DOI：
10.1038/s43246-021-00129-y
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发表时间：
2021-03-05
影响因子：
7.8
通讯作者：
Marumoto, Kazuhiro
中科院分区：
文献类型：
--
作者：
Tsunetomo, Naho;Iguchi, Shohei;Marumoto, Kazuhiro
过渡金属二硫属化物MoS2是一种二维材料，由于其晶体结构而具有丰富的功能，因此在下一代应用中备受关注。许多实验和理论工作都集中在自旋轨道相互作用，耦合谷和自旋自由度，使自旋态可以电控。然而，器件中载流子和原子空位的自旋态还没有从微观角度直接阐明。在这里，我们报告的自旋态薄膜晶体管使用操作电子自旋共振光谱。我们观察到了传导电子和原子空位的不同电子自旋共振信号，并从信号和理论计算中区分了相应的自旋态，评估了自旋磁化率和g因子与栅电压的依赖关系。该分析深入了解了MoS2的磁性，并清楚地表明了与石墨烯相比不同的自旋散射机制，这将有助于改善器件特性和新的应用。确定自旋态的性质对于理解MoS2薄膜晶体管可能的磁性应用至关重要。在这里，自旋态的导电电子和原子空位在二硫化钼区分和研究下，使用电子自旋共振器件操作。
Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemming from its crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degrees of freedom so that the spin-states can be electrically controllable. However, the spin-states of charge carriers and atomic vacancies in devices have not been yet elucidated directly from a microscopic viewpoint. Here, we report the spin-states in thin-film transistors using operando electron spin resonance spectroscopy. We have observed clearly different electron spin resonance signals of the conduction electrons and atomic vacancies, and distinguished the corresponding spin-states from the signals and theoretical calculations, evaluating the gate-voltage dependence and the spin-susceptibility and g-factor temperature dependence. This analysis gives deep insight into the MoS2 magnetism and clearly indicates different spin-scattering mechanisms compared to graphene, which will be useful for improvements of the device characteristics and new applications. Identifying the properties of spin-states is crucial for understanding the possible magnetic applications of MoS2 thin-film transistors. Here, spin-states of conduction electrons and atomic vacancies in MoS2 are distinguished and investigated under device operation using electron spin resonance.