Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
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使用双缓冲层的金属有机氯化氢 VPE 在 GaAs(111)B 上生长 GaN
DOI：
10.1143/jjap.36.l1133
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发表时间：
1997
影响因子：
1.5
通讯作者：
Hisashi Seki Hisashi Seki
中科院分区：
文献类型：
--
作者：
N. Takahashi;S. Matsuki;Akinori Koukitu Akinori Koukitu;Hisashi Seki Hisashi Seki
采用金属有机氯化氢气相外延(MOH-VPE)技术，在GaN衬底上生长了双层GaN缓冲层。该方法在550℃下在GaN(111)B衬底上沉积第一层GaN缓冲层，在850℃热处理10min后，在500℃下沉积第二缓冲层，然后在850℃下生长GaN外延层，得到的GaN外延层的X射线半高宽(FWHM)值小于只有一个缓冲层的GaN外延层。室温光致发光光谱在约361.5 nm处有一个很强的峰。
GaN epitaxial layers were grown by metalorganic hydrogen chloride vapor phase epitaxy (MOH-VPE) using double GaN buffer layers on GaAs substrate. In this method, the first GaN buffer layer was deposited on GaAs(111)B substrate at 550° C, and after annealing at 850° C for 10 min, the second buffer layer was deposited at 500° C. Then the GaN epitaxial layer was grown at 850° C. The X-ray full width at half maximum (FWHM) value of the obtained hexagonal GaN was smaller than that of a GaN epitaxial layer with a single buffer layer. The room temperature photoluminescence spectra exhibited a strong peak at approximately 361.5 nm.