Localized surface plasmon resonances arising from free carriers in doped quantum dots
Localized surface plasmon resonances arising from free carriers in doped quantum dots
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DOI：
10.1038/nmat3004
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发表时间：
2011-05-01
期刊：
影响因子：
41.2
通讯作者：
Alivisatos, A. Paul
中科院分区：
文献类型：
--
作者：
Luther, Joseph M.;Jain, Prashant K.;Alivisatos, A. Paul
局域表面等离子体共振（LSPR）通常出现在贵金属（1，2）的纳米结构中，导致增强的和几何可调的吸收和散射共振。然而，LSPR不限于金属的纳米结构，并且也可以在具有可观的自由载流子浓度的半导体纳米晶体中实现。在这里，我们描述了定义良好的LSPR所产生的p型载流子的空位掺杂的半导体量子点（QD）。通过半导体衬底的自由载流子掺杂实现LSPR将允许LSPR响应的有源片上控制。在单个纳米晶体中的固态过程的等离子体传感和操纵构成了另一种有趣的可能性。我们还表明，掺杂半导体量子点允许实现LSPR和量子限制激子在同一纳米结构内，打开了光子和电子模式的强耦合的可能性，与光捕获，非线性光学和量子信息处理的影响。
Localized surface plasmon resonances (LSPRs) typically arise in nanostructures of noble metals(1,2) resulting in enhanced and geometrically tunable absorption and scattering resonances. LSPRs, however, are not limited to nanostructures of metals and can also be achieved in semiconductor nanocrystals with appreciable free carrier concentrations. Here, we describe well-defined LSPRs arising from p-type carriers in vacancy-doped semiconductor quantum dots (QDs). Achievement of LSPRs by free carrier doping of a semiconductor nanocrystal would allow active on-chip control of LSPR responses. Plasmonic sensing and manipulation of solid-state processes in single nanocrystals constitutes another interesting possibility. We also demonstrate that doped semiconductor QDs allow realization of LSPRs and quantum-confined excitons within the same nanostructure, opening up the possibility of strong coupling of photonic and electronic modes, with implications for light harvesting, nonlinear optics, and quantum information processing.