Optoelectronic properties of highly porous silver oxide thin film
Optoelectronic properties of highly porous silver oxide thin film
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DOI：
10.1007/s42452-020-04091-1
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发表时间：
2021-01-07
影响因子：
2.6
通讯作者：
Haik, Yousef
中科院分区：
文献类型：
--
作者：
Al-Sarraj, Ahmad;Saoud, Khaled M.;Haik, Yousef
本文报道了用超声喷雾热解法和氧等离子体刻蚀法制备的多孔银氧化物纳米线薄膜的氧化时间效应。NW的形态，电气和光学性能进行了研究，根据不同的等离子体刻蚀周期和沉积周期数。等离子体刻蚀和氧化时间的增加增加了银纳米线的表面粗糙度，直到其熔融形成多孔的银氧化物薄膜。利用X射线衍射、扫描电子显微镜、透射电子显微镜、X射线光电子能谱和紫外-可见光谱等技术对AgNW基薄膜进行了表征。所得结果表明，混合介孔Ag 2 O和AgO NW薄膜的形成。在相同条件下氧化300 s后，氧化银氧化物中出现Ag 2 O相，而薄膜的光学透明度随着等离子体刻蚀时间的增加而降低。最终膜的薄层电阻受氧化时间和等离子体施加周期性的影响。
In this paper, we report oxidation time effect on highly porous silver oxide nanowires thin films fabricated using ultrasonic spray pyrolysis and oxygen plasma etching method. The NW's morphological, electrical, and optical properties were investigated under different plasma etching periods and the number of deposition cycles. The increase of plasma etching and oxidation time increases the surface roughness of the Ag NWs until it fused to form a porous thin film of silver oxide. AgNWs based thin films were characterized using X-ray diffraction, scanning electron microscope, transmission electron microscope, X-ray photoemission spectroscopy, and UV-Vis spectroscopy techniques. The obtained results indicate the formation of mixed mesoporous Ag2O and AgO NW thin films. The Ag2O phase of silver oxide appears after 300 s of oxidation under the same conditions, while the optical transparency of the thin film decreases as plasma etching time increases. The sheet resistance of the final film is influenced by the oxidation time and the plasma application periodicity.