Low-flux elucidation of initial growth of Ge clusters deposited on Si(111)-7x7 observed by scanning tunneling microscopy
Low-flux elucidation of initial growth of Ge clusters deposited on Si(111)-7x7 observed by scanning tunneling microscopy
复制标题
DOI：
10.1103/physrevb.79.033302
复制
发表时间：
2009-01-01
影响因子：
3.7
通讯作者：
Tomitori, M.
中科院分区：
文献类型：
--
作者：
Ansari, Z. A.;Arai, T.;Tomitori, M.
在非常低的Ge流量下，使用双极真空扫描隧道显微镜检查Ge在Si（111）-7x7上的沉积; Ge原子在150 ℃下在类似于0.005或0.05 ML/min的流量下沉积。当Ge覆盖度为0.08 ML时，在较低的通量下，在半单胞上优先形成具有六个突起的空心六角Ge团簇，这些团簇均匀且与其他团簇分离。在较高的通量下，各种类型的团簇生长，经常与其他团簇相邻。这表明需要低通量来阐明Si（111）-7x7上生长的Ge团簇的稳定类型。
Deposition of Ge on Si(111)-7x7 under very low Ge flux is examined using ultrahigh vacuum scanning tunneling microscopy; Ge atoms are deposited at 150 degrees C under a flux of similar to 0.005 or 0.05 ML/min. Initially Ge atoms are substituted for Si atoms on corner adatom sites of faulted half unit cells. At a Ge coverage of 0.08 ML under the lower flux, hollow-centered hexagonal Ge clusters with six protrusions are formed preferentially on faulted half unit cells, which are uniform and separated from other clusters. At the higher flux various types of clusters grow, frequently neighboring with others. This indicates that the low flux is needed to elucidate the stable type of Ge clusters grown on Si(111)-7x7.