Advanced bi-functional CoPi co -catalyst decorated g-C3N4 nanosheets coupled with ZnO nanorod arrays as integrated photoanodest
Advanced bi-functional CoPi co -catalyst decorated g-C3N4 nanosheets coupled with ZnO nanorod arrays as integrated photoanodest
复制标题
先进的双功能CoPi助催化剂修饰的g-C3N4纳米片与ZnO纳米棒阵列耦合作为集成光阳极
DOI：
10.1039/c7dt02459b
复制
发表时间：
2018
影响因子：
4
通讯作者：
Guo Xuhong
中科院分区：
文献类型：
--
作者：
Liu Chang;Wu Pengcheng;Wu Kehang;Meng Guihua;Wu Jianning;Hou Juan;Liu Zhiyong;Guo Xuhong
在这项工作中，成功地制备了由一维(1D)氧化锌纳米棒阵列(NRAS)和二维(2D)氮化碳(g-C3N4)包覆组成的CoPI修饰的II型异质结，并将其用作光阳极。CoPI被认为是无定形化合物和两种钴基化合物的混合物：Co3(PO3)6·14H2O和Co(H2PO2)2·6H2O。先进的双功能CoPI起到了遮蔽物的作用，有效地抑制了CNNS/ZnO NRAS的光腐蚀，并提供了更快的空穴转移通道。异质结界面的协同效应有效地促进了载流子从光激g-C3N4纳米片到氧化锌纳米棒的分离。通过在CNNS/ZnO NRAS异质结上负载CoPI，也大大提高了光电流密度。CoPI(10)-CNNS(600)/纳米棒产生的最大光电流密度(1.23Vvs.RHE)为2.45 mA cm−2vs.RHE，约为纯氧化锌纳米棒(0.24 mA cm−2)的10.2倍，高于CNNs800/−(1.23Vvs.RHE)的2.5倍。光电催化性能的进一步提高可能是由于CoPI减少了电荷在半导体/电解液中的积累，从而降低了电子-空穴复合速率。
In this work, a CoPi-decorated type II heterojunction composed of one-dimensional (1D) ZnO nanorod arrays (NRAs) coated with two-dimensional (2D) carbon nitride (g-C3N4) was successfully prepared and used as photoanode. CoPi has been speculated to be a mixture of amorphous compound and two cobalt-based compounds: Co3(PO3)6·14H2O and Co(H2PO2)2·6H2O. The advanced bi-functional CoPi acts like a shelter, effectively inhibiting the photocorrosion of CNNS/ZnO NRAs and providing a faster hole transfer channel. Synergistic effects at the interface of the heterojunction efficiently improve the separation of charge carriers from photoexcited g-C3N4 nanosheets to the ZnO nanorods. Photocurrent density is also greatly enhanced by loading CoPi on CNNS/ZnO NRAs heterojunction. The maximum photocurrent density (2.45 mA cm−2 at 1.23 V vs. RHE) generated from CoPi(10)-CNNS(600)/ZnO nanorods is about 10.2 times greater than that of pristine ZnO nanorods (0.24 mA cm−2 at 1.23 V vs. RHE) and 2.5 times higher than that of CNNS(800)/ZnO (0.95 mA cm−2 at 1.23 V vs. RHE). The further increase of photoelectrocatalytic performance may be attributed to CoPi relieving the charge accumulation at the semiconductor/electrolyte, which decreases the electron–hole recombination rate.