MOVPE Growth of InGaN on Si (111) Substrates With an Intermediate Range of In Content
MOVPE Growth of InGaN on Si (111) Substrates With an Intermediate Range of In Content
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中等 In 含量范围的 Si (111) 衬底上 MOVPE 生长 InGaN
DOI：
10.1002/pssc.201100355
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
N.Shigekawa
中科院分区：
文献类型：
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作者：
A.G Bhuiyan;T.Esaki;A.Mihara;K Sugita;A.Hashimoto;A.Yamamoto;N.Watanabe;H.Yokoyama;N.Shigekawa
本文报道了在AlN/Si（111）衬底上MOVPE生长InN和InxGa 1-xN（x ≤ 0.4）的实验结果。在1000 °C的NH3中对衬底表面进行预处理后，生长出质量良好的InN薄膜。而在N2气氛中对衬底表面进行预处理则导致In液滴的形成。通过改变生长温度和TMI/（TMI+TEG）的摩尔比，在Si（111）衬底上成功地生长了x ≤ 0.4的InxGa 1-xN单晶薄膜，没有发生相分离和金属In的掺入.通过对AlN/Si（111）和GaN/α-Al 2 O3（0001）衬底的对比研究表明，InN、GaN和低In含量InGaN衬底的质量取决于衬底的质量。而中间In含量范围的InGaN的质量几乎不依赖于底层/衬底。这些工作将使我们能够使用MOVPE制造未来的InGaN-Si串联电池。（© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
This paper reports on the MOVPE growth of InN and InxGa1‐xN withxup to ∼0.4 on AlN/Si (111) substrates. Good quality InN films are grown after a pretreatment of the substrate surface at 1000 °C in NH3. While pretreatment of the substrate surface in N2results the In droplet formation. Single‐crystalline InxGa1‐xN films withxup to ∼0.4 are successfully grown on Si (111) substrates without phase separation and metallic In incorporation by changing the growth temperature and TMI/(TMI+TEG) molar ratio. Comparative study between the AlN/Si (111) and GaN/α‐Al2O3(0001) substrates shows that the quality of InN, GaN and InGaN with low In contents depends on the quality of the underlying layer. While the quality of InGaN at the intermediate In content range hardly depends on of the underlying layer/substrate. These works will allow us towards the fabrication of the future InGaN‐Si tandem cell using MOVPE. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)