Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides
Chemical Tuning of Carrier Type and Concentration in a Homologous Series of Crystalline Chalcogenides
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DOI：
10.1021/acs.chemmater.7b01595
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发表时间：
2017-08
影响因子：
8.6
通讯作者：
Tobias Schäfer;Philipp M Konze;J. Huyeng;Volker L. Deringer;T. Lesieur;P. Müller;M. Morgenstern;R. Dronskowski;M. Wuttig
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文献类型：
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作者：
Tobias Schäfer;Philipp M Konze;J. Huyeng;Volker L. Deringer;T. Lesieur;P. Müller;M. Morgenstern;R. Dronskowski;M. Wuttig
碲基相变材料（PCM）能够实现从光学和电子数据存储到热电和等离子体的应用，这些应用都需要精确控制电子特性。这些材料含有异常大量的空位：“化学计量”的空位源于化学成分，“过量”的空位起着经典掺杂剂的作用。在这里，我们展示了如何在固溶体Sn（Sb 1-xBix）2 Te 4中独立控制这两种类型的空位。我们在整个组成范围内以小步改变x，并表明这对材料的电子性质有着深远的影响：值得注意的是，我们观察到在x = 0.7时从p型导电到n型导电的变化，仅由组成控制。我们的发现导致了一种新的成分（即化学）可调材料平台，可以精确控制电性能。
Tellurium-based phase-change materials (PCMs) enable applications from optical and electronic data storage to thermoelectrics and plasmonics, which all demand precise control of electronic properties. These materials contain an unusually large number of vacancies: “stoichiometric” ones that stem from the chemical composition and “excess” vacancies that act like classical dopants. Here we show how both types of vacancies can be controlled independently in the solid solution Sn(Sb1–xBix)2Te4. We vary x in small steps over the entire compositional range and show that this has a profound effect on the material’s electronic nature: remarkably, we observe a change from p- to n-type conduction at x ≈ 0.7, solely controlled by composition. Our findings lead to a new compositionally (that is, chemically) tunable materials platform that enables precise control of electrical properties.