Selective vapor-liquid-solid epitaxial growth of micro-SI probe electrode arrays with on-chip MOSFETs on Si(111) substrates
Selective vapor-liquid-solid epitaxial growth of micro-SI probe electrode arrays with on-chip MOSFETs on Si(111) substrates
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DOI：
10.1109/ted.2003.822473
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发表时间：
2004-03-01
影响因子：
3.1
通讯作者：
Ishida, M
中科院分区：
文献类型：
--
作者：
Kawano, T;Kato, Y;Ishida, M
本文报道了用mosfet在同一硅衬底上实现微硅探针阵列的制造技术。利用催化金点阵列和Si2H6作为分子束外延的气源，通过选择性气液固（VLS）生长在Si（111）衬底上成功制备了微Si探针阵列。本文在Si（111）衬底上制备了mosfet，并在mosfet的漏极区放置了Au点来生长Si探针。在这些基质上进行了700℃VLS生长2 h。因此，mosfet可用于VLS-Si探针阵列的片上电路。在VLS过程前后测量了mosfet的电特性。经过VLS处理后，没有观察到由于au扩散的影响而导致MOSFET特性的变化，并且结果证实了在700℃的温度下VLS生长可以使微si探针的制备不变质。的mosfet。实现了电导可控的VLS-Si探针。生长的Si探针具有较高的电阻，但由于杂质的扩散可以改变其电导率。
This paper reports on a fabrication technique for realizing micro-Si probe arrays with MOSFETs on the same Si substrate. Micro-Si probe arrays have been successfully fabricated on Si (111) substrates by selective vapor-liquid-solid (VLS) growth using catalytic Au dot arrays and Si2H6 used as the gas source for a molecular-beam-epitaxy. The Si probes can be grown at temperatures ranging from 500 degreesC to 700 degreesC In this paper, MOSFETs were fabricated on Si (111) substrates and Au dots were placed at the drain regions of the MOSFETs in order to grow the Si probes. VLS growth at 700 degreesC for 2 h was carried out on these substrates. Consequently, the MOSFETs can be used in on-chip circuits for the VLS-Si probe array. The electrical characteristics of the MOSFETs were measured before and after the VLS process. After the VLS process, no changes in the MOSFET characteristics Were observed due to the effects of Au-diffusion, and the results confirmed that VLS growth at a temperature of 700 degreesC allows fabrication of micro-Si probes without deterioration. of the MOSFETs. VLS-Si probes with controlled conductance were realized. The as-grown Si probes were of high resistance, but could be changed to various conductivities by impurity diffusion.