Short channel effects on gallium nitride/gallium oxide nanowire transistors
Short channel effects on gallium nitride/gallium oxide nanowire transistors
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DOI：
10.1063/1.4764554
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发表时间：
2012-10
影响因子：
4
通讯作者：
Jeng‐Wei Yu;P. Yeh;S. Wang;Yuh‐Renn Wu;M. Mao;Hao-Hsiung Lin;L. Peng
中科院分区：
文献类型：
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作者：
Jeng‐Wei Yu;P. Yeh;S. Wang;Yuh‐Renn Wu;M. Mao;Hao-Hsiung Lin;L. Peng
当晶体管栅极长度 Lg 从 500 nm 减小到 50 nm 时，氮化镓/氧化镓 GaN/Ga2O3 纳米线金属氧化物半导体场效应晶体管的工作平均电子速度为 ∼1.24 × 107 cm/s，阈值电压滚降为 -0.2 V。在 Lg = 50 nm 器件上观察到饱和电流提高至 120 μA，单位电流/功率增益截止频率提高至 150/180 GHz。我们的研究揭示了以下优点：(i) 在 {11´01´}GaN/{002}Ga2O3 界面使用极化感应正电荷和高 k 电介质来提供载流子限制并屏蔽漏极场，以及 (ii) 在 (0001)GaN/蓝宝石界面使用极化感应负电荷形成后势垒以抑制泄漏并改善短沟道 运输属性。
Gallium nitride/gallium oxide GaN/Ga2O3 nanowire metal-oxide-semiconductor field-effect-transistors are shown to operate at an average electron velocity of ∼1.24 × 107 cm/s and threshold-voltage roll-off of −0.2 V as the transistor gate length Lg reduced from 500 to 50 nm. Improvement of saturation current to 120 μA and unity current/power-gain cut-off frequency to 150/180 GHz is observed on Lg = 50 nm devices. Our study reveals the advantages of using (i) polarization-induced positive charges and high-k dielectric at the {11¯01¯}GaN/{002}Ga2O3 interface to provide carrier confinement and to shield the drain field, and (ii) polarization-induced negative charges at the (0001)GaN/sapphire interface to form a back-barrier to suppress leakage and improve the short-channel transport properties.