Photoluminescence properties and energy-level analysis of Ga2O3:Tb3+ green phosphor prepared by metal organic deposition
Photoluminescence properties and energy-level analysis of Ga2O3:Tb3+ green phosphor prepared by metal organic deposition
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金属有机沉积制备Ga2O3:Tb3绿色荧光粉的光致发光性能及能级分析
DOI：
10.1149/2.013406jss
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Y. Tokida and S. Adachi
中科院分区：
文献类型：
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作者：
Y. Tarui;O. Kojima;T. Kita;A. Majeed;P. Ivanov;E. Clarke;R. Hogg;Y. Tokida and S. Adachi
采用金属有机物沉积法合成了Ga 2 O3：Tb 3+绿色荧光粉，并对其光致发光（PL）特性进行了研究。X射线衍射分析表明，在Tc = 700 ℃下煅烧，只能合成β相Ga 2 O3：Tb 3+。Tb 3+相关的绿色发射强度随着M= Tb/Ga摩尔比的增加而增加，在M = 0.005 - 0.03时达到饱和，然后在M> 0.03时发生浓度猝灭。在M> 0.03时清楚地观察到由浓度猝灭引起的发光衰减时间的减少。绿色发光强度随着温度的升高而逐渐降低，猝灭能分别为0.25和0.63 eV。由β-Ga 2 O3荧光粉的光致发光和光致发光激发光谱得到了Tb 3+离子在β-Ga 2 O3中的详细能级结构。
We synthesize Ga 2 O 3: Tb 3+ green phosphor by metal-organic deposition and report the photoluminescence (PL) properties of this phosphor. The X-ray diffraction analysis indicates that only β-phase Ga 2 O 3: Tb 3+ can be synthesized by calcination at T c= 700 C. The Tb 3+-related green emission intensity shows an increase with increasing molar ratio M= Tb/Ga and a saturation at M∼ 0.005− 0.03, followed by the concentration quenching at M> 0.03. The decreased luminescence decay time caused by the concentration quenching is clearly observed at M> 0.03. The green emission intensity exhibits a gradual decrease with increasing temperature above∼ 300 K, yielding quenching energies of 0.25 and 0.63 eV. The detailed energy-level scheme of Tb 3+ ions in β-Ga 2 O 3 is obtained from the PL and PL excitation spectra of this phosphor.