Front Cover: Binary copper oxide semiconductors: From materials towards devices (Phys. Status Solidi B 8/2012)
Front Cover: Binary copper oxide semiconductors: From materials towards devices (Phys. Status Solidi B 8/2012)
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DOI：
10.1002/pssb.201290019
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发表时间：
2012-08
影响因子：
1.6
通讯作者：
B. Meyer;A. Polity;D. Reppin;M. Becker;P. Hering;P. Klar;T. Sander;C. Reindl;J. Benz;M. Eickhoff;C. Heiliger;M. Heinemann;J. Bläsing;A. Krost;S. Shokovets;C. Müller;C. Ronning
中科院分区：
文献类型：
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作者：
B. Meyer;A. Polity;D. Reppin;M. Becker;P. Hering;P. Klar;T. Sander;C. Reindl;J. Benz;M. Eickhoff;C. Heiliger;M. Heinemann;J. Bläsing;A. Krost;S. Shokovets;C. Müller;C. Ronning
氧化铜化合物半导体提供了一种独特的可能性，可以调节从绝缘到金属传导、从带隙能量 2.1 eV 到红外 1.40 eV 的光学和电子特性，即直接进入太阳能电池应用效率最大值的中间。这种二元半导体可以通过薄膜沉积技术制备三个明显不同的相：Cu2O、Cu4O3 和 CuO，它们的铜氧化态不同。回顾了通过实验已知或通过理论预测的材料特性。它们得到了薄膜生长和表征的新实验结果的补充，两者都将得到批判性的讨论和总结。就器件而言，重点是基于 Cu2O 的太阳能电池性能。光电子能谱（XPS）表明，p-Cu2O/n-AlGaN异质结系统比目前受到青睐的p-Cu2O/n-ZnO异质结器件更有前景作为高效太阳能电池。
Copper‐oxide compound semiconductors provide a unique possibility to tune the optical and electronic properties from insulating to metallic conduction, from bandgap energies of 2.1 eV to the infrared at 1.40 eV, i.e., right into the middle of the efficiency maximum for solar‐cell applications. Three distinctly different phases, Cu2O, Cu4O3, and CuO, of this binary semiconductor can be prepared by thin‐film deposition techniques, which differ in the oxidation state of copper. Their material properties as far as they are known by experiment or predicted by theory are reviewed. They are supplemented by new experimental results from thin‐film growth and characterization, both will be critically discussed and summarized. With respect to devices the focus is on solar‐cell performances based on Cu2O. It is demonstrated by photoelectron spectroscopy (XPS) that the heterojunction system p‐Cu2O/n‐AlGaN is much more promising for the application as efficient solar cells than that of p‐Cu2O/n‐ZnO heterojunction devices that have been favored up to now.