Grain‐boundary diffusion in thin films. II. Multiple grain boundaries and surface diffusion
Grain‐boundary diffusion in thin films. II. Multiple grain boundaries and surface diffusion
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DOI：
10.1063/1.322441
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发表时间：
1976-10
影响因子：
3.2
通讯作者：
G. Gilmer;H. Farrell
中科院分区：
文献类型：
--
作者：
G. Gilmer;H. Farrell
用解析和数值方法研究了多晶薄膜中的扩散问题。分析中包括了体相、晶界和界面扩散，并分析了各过程对浓度分布的影响条件。薄膜被视为包含垂直于薄膜平面的均匀间隔的晶界的有限厚度的平板。假设平板的一个表面与无限大的扩散物质储存库接触。考虑了三种极限情况，其中第二表面是(I)扩散势垒，(Ii)具有无限表面扩散系数的平面，和(Iii)零浓度表面。
Diffusion in polycrystalline thin films is investigated using both analytical and numerical methods. Bulk, grain‐boundary, and interfacial diffusion are all included in the analysis, and the conditions under which each process influences the concentration profile are evaluated. The thin film is treated as a slab of finite thickness containing uniformly spaced grain boundaries that are perpendicular to the plane of the film. One surface of the slab is assumed to be in contact with an infinite reservoir of the diffusing species. Three limiting cases are considered in which the second surface is (i) a barrier to diffusion, (ii) a plane with an infinite surface diffusion coefficient, and (iii) a zero‐concentration surface.