The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
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DOI：
10.1016/j.jcrysgro.2009.07.032
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发表时间：
2009-09
影响因子：
1.8
通讯作者：
A. Jasik;A. Wnuk;J. Gaca;M. Wójcik;A. Wójcik-Jedlinska;J. Muszalski;W. Strupinski
中科院分区：
文献类型：
--
作者：
A. Jasik;A. Wnuk;J. Gaca;M. Wójcik;A. Wójcik-Jedlinska;J. Muszalski;W. Strupinski
