Quantum entanglement of particles on a ring with fractional statistics
Quantum entanglement of particles on a ring with fractional statistics
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环上粒子的量子纠缠与分数统计
DOI：
10.1103/physreva.80.052332
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发表时间：
2009-06
影响因子：
2.9
通讯作者：
Chen, Shu
中科院分区：
文献类型：
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作者：
Hao, Yajiang;Guo, Hongli;Chen, Shu
利用角分辨光谱学系统地研究了Ni和Co插入层对Co/Cu（001）上生长的Cu薄膜量子阱态的影响。当电子能量E-E(F) < -0.5 eV时，我们发现Ni和Co插入层的行为相似，它们作为势能势垒将Cu薄膜划分为两个Cu量子阱。在费米能级附近，Ni和Co插入层对Cu QW态的影响不同，而Co薄层仍对Cu QW态产生扰动，Ni插入层表现为Cu层，特别是在费米能级下，即使厚度达到10 ML也表现为Cu层。Ni和Co插入层的不同效果是由于它们的电子带与Cu的能带匹配不同。第一性原理计算证实，在Cu/Ni和Cu/Co界面上，费米能级附近的电子反射率确实有很大的不同，支持了实验结果。
The effect of Ni and Co inserting layers on the quantum well (QW) states of a Cu film grown on Co/Cu(001) is systematically investigated using angle-resolved photoemission spectroscopy. For electron energy E-E(F) < -0.5 eV, we find that both Ni and Co inserting layers behave similarly to serve as a potential-energy barrier to divide the Cu film into two Cu QWs. For energy near the Fermi energy, the Ni and Co inserting layers have different effects on the Cu QW states while the Co thin layer still perturbs the Cu QW states, the Ni inserting layer behaves as if it were a Cu layer, especially at the Fermi energy, even up to 10 ML thickness. Such different effects of the Ni and Co inserting layers are attributed to their different electronic band matching with the Cu energy band. The first-principles calculation confirms that the electron reflectivity near the Fermi level is indeed very different at the Cu/Ni and Cu/Co interfaces, supporting the experimental results.
DOI：
10.1142/0961
发表时间：
1990-10
期刊：
--
影响因子：
--
作者：
F. Wilczek;D. Rokhsar
通讯作者：
F. Wilczek;D. Rokhsar