Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate
Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate
复制标题
不同介电聚合物栅极的MoS2场效应晶体管的电学特性
DOI：
10.1063/1.4991843
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发表时间：
2017-06-01
期刊：
影响因子：
1.6
通讯作者：
Chu, Junhao
中科院分区：
文献类型：
--
作者：
Liu, Lan;Wang, Xudong;Chu, Junhao
通过分析以铁电体和一般聚合物为栅介质的二硫化钼纳米片场效应晶体管的传输曲线，研究了二硫化钼纳米片场效应晶体管的特性。与传统的MoS 2-FET中的电子俘获-去俘获效应相反，在具有铁电聚（偏氟乙烯/三氟乙烯）[P（VDF-TrFE）]膜的MoS 2-FET中观察到明显的滞后。在P（VDF-TrFE）的极化场控制下，MoS 2纳米片的有效载流子迁移率达到约95.6 cm（2）/Vs，而在具有传统介电聚甲基丙烯酸甲酯（PMMA）膜的MoS 2-FET中，有效载流子迁移率仅为约15.3 cm（2）/Vs。此外，铁电MoS 2-FET具有比PMMA MoS 2-FET（约105）更高的开/关电阻比（约107）。(C)2017年作者。
The characteristics of MoS2-nanoflake field-effect transistors (FETs) were studied by analyzing the transfer curves in MoS2-FETs with ferroelectric and general polymers as the gate dielectric. A clear hysteresis, opposite to the electron trapping-detrapping effect in traditional MoS2-FETs, was observed in the MoS2-FETs with ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] films. The effect carrier mobility of MoS2 nanoflakes reached approximately 95.6 cm(2)/Vs under the control of the polarization field of P(VDF-TrFE), whereas the effect carrier mobility was only approximately 15.3 cm(2)/Vs in MoS2-FETs with traditional dielectric poly(methyl methacrylate) (PMMA) films. Furthermore, the ferroelectric MoS2-FETs possess a higher ON/OFF resistance ratio (approximately 107) than do the PMMA MoS2-FETs (approximately 105). (C) 2017 Author(s).