Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy
Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy
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DOI：
10.1063/1.95332
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发表时间：
1984-09
影响因子：
4
通讯作者：
P. Petroff;A. Gossard;W. Wiegmann
中科院分区：
文献类型：
--
作者：
P. Petroff;A. Gossard;W. Wiegmann
通过在邻位（100）GaAs衬底上沉积，实现了对分子束外延GaAs和AlAs薄膜界面结构和成分的超精细控制。这种控制通过在宽的温度范围内产生（GaAs）m-（AlAs）n亚单层（m和/或n<1）超晶格来证明。这些亚单层超晶格的透射电子显微镜分析表明，层生长制度是占主导地位的，层成核优先在（100）邻位表面上的台阶边缘启动。亚单层超晶格的潜在应用，包括垂直于衬底表面的超晶格层的生长进行了描述。
Hyperfine control of the interface structure and composition between GaAs and AlAs films grown by molecular beam epitaxy has been achieved by deposition on vicinal (100) GaAs substrates. This control is demonstrated by producing (GaAs)m‐(AlAs)n submonolayer (m and/or n<1) superlattices over a wide temperature range. Analysis of these submonolayer superlattices by transmission electron microscopy shows that the layer growth regime is dominant and that layer nucleation is initiated preferentially at the step edges on the (100) vicinal surface. Potential applications of submonolayer superlattices including the growth of superlattice layers perpendicular to the substrate surface are described.