Two-dimensional analytic modeling of very thin SOI MOSFETs
Two-dimensional analytic modeling of very thin SOI MOSFETs
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DOI：
10.1109/soi.1989.69745
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发表时间：
1989-10
期刊：
影响因子：
--
通讯作者：
J. Woo;K. Terrill;P. Vasudev
中科院分区：
文献类型：
--
作者：
J. Woo;K. Terrill;P. Vasudev
只提供摘要形式。本文描述了一种基于泊松方程的二维解析模型，该模型采用无穷级数法求解了薄SOI以及栅极和埋地氧化物中的泊松方程。利用该模型，研究了SOI厚度对尺度的依赖关系。发现极薄的SOI适合深亚微米器件应用。在本体-衬底偏压不可行的应用中，可以通过将金属离子注入埋藏的氧化物中来提供等效的本体-衬底偏压。利用该模型对线性区域阈值电压进行了研究，发现薄SOI的短通道性能总体上有所改善
Summary form only given. A two-dimensional analytic model is described that is based on the solution of the Poisson's equation in the thin SOI as well as in the gate and buried oxides using an infinite series method. Using this model, the scaling dependence on the thickness of the SOI is studied. It is found that very thin SOI is suitable for deep submicron device application. In applications where bulk-substrate bias is not feasible, it may be possible to provide the equivalent bulk-substrate bias through metal-ion implanted into the buried oxides. The linear region threshold voltage was also investigated using this model and it was found that short-channel behavior in general improves with thin SOI.>