Characterization of BCN films synthesized by radiofrequency plasma enhanced chemical vapor deposition
Characterization of BCN films synthesized by radiofrequency plasma enhanced chemical vapor deposition
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DOI：
10.1016/j.jpcs.2008.08.013
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发表时间：
2009
影响因子：
4
通讯作者：
M. Mannan;M. Nagano;T. Kida;N. Hirao;Y. Baba
中科院分区：
文献类型：
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作者：
M. Mannan;M. Nagano;T. Kida;N. Hirao;Y. Baba
以三二甲氨基硼烷(TDMAB)为前驱体，采用射频等离子体增强化学气相沉积法在Si(100)衬底上制备了碳氮化硼(BCN)薄膜。在4 0 0~800W的不同射频功率、2×10−1Torr的工作压力下进行沉积。傅立叶变换红外光谱证实了sp2键合BCN相的形成。X-射线光电子能谱测量表明，B原子与C原子和N原子形成了BCN原子杂化构型，其化学组成分别为B52C12N36(样品1，射频功率400W)、B52C10N38(样品2,500W)和B46C18N36(样品3,800W)。近边X射线吸收精细结构(NEXAFS)测量表明，B原子不仅与N原子成键，而且还与C原子成键，形成不同构型的sp2-BCN原子杂化材料。NEXAFS的偏振相关性表明，sp2-BCN薄膜的主要杂化构型沿垂直于硅衬底的方向取向。
Boron carbonitride (BCN) films have been synthesized on Si(100) substrate by radio frequency plasma enhanced chemical vapor deposition using tris-(dimethylamino)borane (TDMAB) as a precursor. The deposition was performed at the different RF powers of 400–800W, at the working pressure of 2×10−1Torr. The formation of the sp2-bonded BCN phase was confirmed by Fourier transform infrared spectroscopy. X-ray photoelectron spectroscopy measurements showed that B atoms were bonded to C and N atoms to form the BCN atomic hybrid configurations with the chemical compositions of B52C12N36(sample 1; prepared at the RF power of 400W), B52C10N38(sample 2; at 500W) and B46C18N36(sample 3; at 800W), respectively. Near-edge X-ray absorption fine structure (NEXAFS) measurements indicated that B atoms were bonded not only to N atoms but also to C atoms to form various configurations of sp2-BCN atomic hybrids. The polarization dependence of NEXAFS suggested that the predominant hybrid configuration of sp2-BCN films oriented in the direction perpendicular to the Si substrate.