Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
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单能正电子束探测离子注入金刚石中的空位型缺陷
DOI：
10.1143/jjap.34.1772
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发表时间：
1995
影响因子：
1.5
通讯作者：
S. Shikata
中科院分区：
文献类型：
--
作者：
A. Uedono;T. Kawano;S. Tanigawa;R. Suzuki;T. Ohdaira;T. Mikado;S. Fujii;S. Shikata
用正电子湮没技术研究了180 keV B+、C+和N+离子注入合成金刚石（Ib型）中引入的空位型缺陷。对于未注入样品，正电子的扩散长度较短，正电子的寿命比IIa型样品长。这些事实归因于正电子被与氮有关的缺陷捕获或散射。对于离子注入的标本，空位型缺陷的深度分布，确定从测量的湮没辐射的多普勒展宽轮廓作为入射正电子能量的函数。得到的缺陷分布与用蒙特卡罗方法计算的离子能量损失的分布一致。通过对正电子寿命谱的测量，确定了由B+或N+离子注入引入的主要缺陷物种是空位团簇和这些杂质的复合物。
Vacancy-type defects introduced by 180-keV B+-, C+- and N+-ion implantation in synthesized diamonds (type Ib) were probed by the positron annihilation technique. For an unimplanted specimen, the diffusion length of positrons was shorter and the lifetime of positrons was longer than those for a type IIa specimen. These facts were attributed to the trapping or the scattering of positrons by nitrogen-related defects. For ion-implanted specimens, the depth distributions of vacancy-type defects were determined from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. The obtained profiles of defects were in agreement with those of an energy loss of ions calculated by the Monte Carlo method. From measurements of lifetime spectra of positrons, the dominant defect species introduced by the B+- or N+-ion implantation were identified as complexes of vacancy clusters and these impurities.