Germanium MOSFETs With $hbox{CeO}_{2}/hbox{HfO}_{2}/ hbox{TiN}$ Gate Stacks
Germanium MOSFETs With $hbox{CeO}_{2}/hbox{HfO}_{2}/ hbox{TiN}$ Gate Stacks
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具有 $hbox{CeO}_{2}/hbox{HfO}_{2}/ hbox{TiN}$ 栅极堆栈的锗 MOSFET
DOI：
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发表时间：
2007
影响因子：
3.1
通讯作者：
A. Sotiropoulos
中科院分区：
文献类型：
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作者：
G. Nicholas;D. Brunco;A. Dimoulas;J. Van Steenbergen;F. Bellenger;M. Houssa;M. Caymax;M. Meuris;Y. Panayiotatos;A. Sotiropoulos
采用高k值CeO<sub>2</sub>/HfO<sub>2</sub>/TiN栅叠层制备了长沟道Ge pMOSFET和nMOSFET。CeO<sub>2</sub>被发现提供有效的钝化的Ge表面，与低二极管表面漏电流。pMOSFET的<sub>导通</sub>/<sub>截止</sub>比为10<sup>6</sup>，亚阈值斜率为10 7 mV/dec，峰值迁移率为90 cm<sup>2</sup>/Vmiddots（0.2 5 MV/cm）。nMOSFET的性能受到结形成不良的影响，峰值迁移率仅为~ 3cm<sup>2</sup>/Vmiddots，但确实显示出令人鼓舞的10<sup>5的</sup>I<sub>ON</sub>/I<sub>OFF</sub>比和85 mV/dec的亚阈值斜率
Long-channel Ge pMOSFETs and nMOSFETs were fabricated with high-kappa CeO<sub>2</sub>/HfO<sub>2</sub>/TiN gate stacks. CeO<sub>2 </sub> was found to provide effective passivation of the Ge surface, with low diode surface leakage currents. The pMOSFETs showed a large I <sub>ON</sub>/I<sub>OFF</sub> ratio of 10<sup>6</sup>, a subthreshold slope of 107 mV/dec, and a peak mobility of approximately 90 cm<sup>2 </sup>/Vmiddots at 0.25 MV/cm. The nMOSFET performance was compromised by poor junction formation and demonstrated a peak mobility of only ~3 cm<sup>2</sup>/Vmiddots but did show an encouraging I<sub>ON</sub>/I <sub>OFF</sub> ratio of 10<sup>5</sup> and a subthreshold slope of 85 mV/dec