Fabrication and Characterization of p-n Homojunctions in Cuprous Oxide by Electrochemical Deposition
Fabrication and Characterization of p-n Homojunctions in Cuprous Oxide by Electrochemical Deposition
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DOI：
10.1149/1.2748632
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发表时间：
2007-09
影响因子：
--
通讯作者：
Longcheng Wang;M. Tao
中科院分区：
文献类型：
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作者：
Longcheng Wang;M. Tao
电化学沉积的氧化亚铜(Cu 2 O)的导电类型（n型或p型）可以通过溶液pH值来控制。研究发现，在溶液pH值低于7.5时沉积的氧化亚铜是n型半导体，而在溶液pH值高于9.0时沉积的氧化亚铜是p型半导体。采用两步法依次沉积p型和n型氧化亚铜，在氧化亚铜中形成p-n同质结。光电流和电流-电压测量证明了氧化亚铜p-n同质结的成功形成。
The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu 2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.