Ultrathin gate oxide CMOS with nondoped selective epitaxial Si channel layer
Ultrathin gate oxide CMOS with nondoped selective epitaxial Si channel layer
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DOI：
10.1109/16.925239
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发表时间：
2001-06-01
影响因子：
3.1
通讯作者：
Iwai, H
中科院分区：
文献类型：
--
作者：
Momose, HS;Ohguro, T;Iwai, H
非掺杂选择性外延硅沟道技术已应用于超薄栅氧CMOS晶体管。证实了具有超薄栅极氧化物的外延沟道MOSFET在直接隧道状态下漏极电流驱动和跨导得到改善，还发现外延Si沟道显着降低了直接隧道栅极漏电流，详细研究了沟道杂质浓度与直接隧道栅极漏电流之间的关系。结果表明，外延沟道器件中较低的漏电流不能完全用沟道处的杂质浓度较低来解释。结果表明，外延沟道情况下漏电流的改善可归因于氧化膜质量某些方面的改善，例如粗糙度或缺陷密度，并且氧化膜质量的改善对于超薄栅极氧化物 CMOS 至关重要，AFM 和 1/f 噪声结果支持外延 Si 沟道 MOSFET 中的 SiO2/Si 界面质量改善了。还展示了 TiN 栅电极 CMOS 的良好性能和较低漏电流。
The nondoped selective epitaxial Si channel technique has been applied to ultrathin gate oxide CMOS transistors. It was confirmed that drain current drive and transconductance are improved in the epitaxial channel MOSFETs with ultrathin gate oxides in the direct-tunneling regime, It was also found that the epitaxial Si channel noticeably reduces the direct-tunneling gate leakage current, The relation between channel impurity concentration and direct-tunneling gate leakage current was investigated in detail. It was confirmed that the lower leakage current in epitaxial channel devices was not completely explained by the lower impurity concentration at the channel, The results suggest that the improved leakage current in the epitaxial channel case is attributable to the improvement of some aspect of the oxide film quality, such as roughness or defect density, and that the improvement of the oxide film quality is essential for ultrathin gate oxide CMOS, AFM and 1/f noise results support that SiO2/Si interface quality in epitaxial Si channel MOSFETs is improved. Good performance and lower leakage current of TiN gate electrode CMOS was also demonstrated.