InN growth on sapphire using different nitridation procedures
InN growth on sapphire using different nitridation procedures
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使用不同氮化程序在蓝宝石上生长 InN
DOI：
10.1002/pssa.200565414
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
W. Richter
中科院分区：
文献类型：
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作者：
M. Drago;C. Werner;M. Pristovsek;U. Pohl;W. Richter
我们使用原位光谱椭圆偏振法（SE）研究了用于InN的金属有机气相外延的具有氨的最佳蓝宝石氮化条件。SE表示在氮化的第一个45秒期间在蓝宝石表面的顶部上形成完整的含AlN层。进一步的氮化通过氮扩散导致AlN类层的生长并导致粗糙化。在蓝宝石衬底上生长了一系列高质量的InN薄膜。电子特性清楚地表明了蓝宝石氮化45秒的最佳InN质量，即当只有蓝宝石表面被氮化时，如通过原位SE所确定的。（© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We studied optimal sapphire nitridation conditions with ammonia for the metal‐organic vapor phase epitaxy of InN using in‐situ spectroscopic ellipsometry (SE). SE indicates the formation of a complete AlN‐containing layer on top of the sapphire surface during the first 45 s of nitridation. Further nitridation leads to a growth of the AlN‐like layer by nitrogen diffusion and to roughening. Successively, a set of high quality InN films were grown onto sapphire substrates after different nitridation duration. Electronic characterisation clearly indicates optimum InN quality for 45 s of sapphire nitridation, i.e. when only the sapphire surface is nitridated, as determined by in‐situ SE. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)