Atomic-layer etching of GaN by using an HBr neutral beam
Atomic-layer etching of GaN by using an HBr neutral beam
复制标题
使用 HBr 中性束对 GaN 进行原子层蚀刻
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
S. Samukawa
中科院分区：
文献类型：
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作者：
D. Ohori;T. Sawada;K. Sugawara;M. Okada;K. Nakata;Kazutaka Inoue;Daisuke Sato;H. Kurihara;S. Samukawa
在栅极凹槽形成工艺中，通过干法蚀刻去除阻挡层以降低栅极电极下的二维电子气浓度来实现常关操作。因此，GaN的原子层无缺陷蚀刻对于实现高频、高功率和常关操作是必不可少的。采用溴化氢中性束对GaN进行了原子层无缺陷刻蚀。这项研究发现，HBr中性束可以实现更精确的原子层蚀刻比Cl 2中性束，因为HBr化学可以控制原子层蚀刻的反应性，形成一个更薄，更少的挥发性反应层。
In the gate-recess formation process, normally-off operation is achieved by removing the barrier layer by dry etching to reduce the two-dimensional-electron-gas concentration under the gate electrode. An atomic-layer defect-free etching of GaN is thus indispensable to achieve high-frequency, high-power, and normally-off operation. More-precise atomic-layer defect-free GaN etching was investigated by using an HBr neutral beam. This investigation found that the HBr neutral beam could achieve more-precise atomic-layer etching than the Cl2 neutral beam because the HBr chemistry can control the reactivity of atomic-layer etching by forming a thinner and less-volatile reaction layer.