In situ ellipsometric measurements of x‐ray resists
In situ ellipsometric measurements of x‐ray resists
复制标题
X 射线抗蚀剂的原位椭圆偏振测量
DOI：
10.1116/1.585815
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发表时间：
1991
影响因子：
1.4
通讯作者：
C. Babcock
中科院分区：
文献类型：
--
作者：
M. Sullivan;James W. Taylor;C. Babcock
本文介绍了 X 射线光刻胶在显影过程中的原位椭圆测量结果。 PMMA被用来验证先前的研究结果并证实该技术和理论模型的有效性。然后将该技术应用于负性化学放大光刻胶 Microposit XP-90104C (Shipley)。由于化学放大抗蚀剂使用水基显影剂（而不是 PMMA 系统中的醇溶剂），因此采用原位椭圆光度法来测试抗蚀剂在显影过程中不会膨胀的假设。当温度低于 35°C 时，在 MF-322 显影剂中未观察到暴露的 XP-90104C 出现明显的膨胀。在40℃时，检测到膨胀的开始。通过椭圆光度法测量的溶解过程与具有突变抗蚀剂-显影剂界面的均匀膜溶解的理论模型略有不同。用 XP-90104C 打印的 0.3 μm 线条的扫描电子显微镜 (SEM) 图像表明，电阻的表面粗糙化...
This paper presents the results of in situ ellipsometry of x‐ray photoresists during development. PMMA was used to verify the results of previous studies and confirm the validity of the technique and the theoretical models. The technique was then applied to a negative chemically amplified photoresist Microposit XP‐90104C (Shipley). Because the chemically amplified resist uses an aqueous‐base developer (instead of the alcohol solvents such as in the PMMA system), in situ ellipsometry was employed to test the assumption that the resist does not swell during development. No appreciable swelling of exposed XP‐90104C was observed in MF‐322 developer for temperatures below 35 °C. At 40 °C, the onset of swelling was detected. The process of dissolution measured by ellipsometry departed slightly from a theoretical model of uniform film dissolution with an abrupt resist‐developer interface. Scanning electron microscopy (SEM) images of 0.3 μm lines printed with XP‐90104C indicate that surface roughening of the resi...