High-resolution temperature sensing with source-gated transistors
High-resolution temperature sensing with source-gated transistors
复制标题
使用源极门控晶体管进行高分辨率温度传感
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
S. Silva
中科院分区：
文献类型：
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作者：
R. Sporea;J. Shannon;S. Silva
源极栅极晶体管（SGT）[1]是一种三端器件，其中电流由源极的势垒控制。栅极电压主要用于调制源极势垒的有效高度。与传统场效应晶体管相比，这些器件具有许多操作优势，包括潜在的小得多的饱和电压和非常低的饱和输出电导，这导致低功耗操作和高固有增益[2]。
Source-gated transistors (SGTs) [1] are three-terminal devices in which the current is controlled by a potential barrier at the source. The gate voltage is used primarily to modulate the effective height of the source barrier. These devices have a number of operational advantages over conventional field-effect transistors, including a potentially much smaller saturation voltage and very low output conductance in saturation, which lead to low power operation and high intrinsic gain [2].