Electrical Modeling and Analysis of a Mixed Carbon Nanotube Based Differential Through Silicon via in 3-D Integration
Electrical Modeling and Analysis of a Mixed Carbon Nanotube Based Differential Through Silicon via in 3-D Integration
复制标题
3-D 集成中基于混合碳纳米管的硅通孔差分的电气建模和分析
DOI：
10.1109/tnano.2015.2509019
复制
发表时间：
2016
影响因子：
2.4
通讯作者：
Shi Ge
中科院分区：
文献类型：
--
作者：
Qian Libo;Xia Yinshui;Shi Ge
Based on the extracted equivalent parasitic parameters, the distributed transmission line model of a mixed carbon nanotube bundle (MCB) built signal-ground-signal-type differential through silicon via (TSV) is established and validated against the multiconductor transmission line model (MTL) results and predictive experiment results over a wide frequency range. Using the proposed model, the effect of various dimensional parameters and material properties on the signal loss and characteristic impedances of the differential TSV interconnect is investigated for odd- and even-mode signal propagation, respectively. It is observed that dielectric thickness is the most important factor affecting the transmission characteristics of TSV interconnects for the proposed TSV configuration. Moreover, various electrical performances of the proposed differential TSV, such as insertion loss, eye opening area, characteristic impedances, and 50% time delay are evaluated and compared to that of a signal-ground-type single ended TSV interconnect. The results presented in this paper will be helpful to fully understand the CNT-TSV electrical characterization and provide some signal integrity-aware guidelines for circuit designers in early planning stage.
