High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode
High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode
复制标题
AlAs/GaAs/AlAs 谐振隧道二极管中带电 InAs 点的高光激发载流子倍增
DOI：
10.1063/1.2832368
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发表时间：
2008-01-14
影响因子：
4
通讯作者：
Zeng, Heping
中科院分区：
文献类型：
--
作者：
Wang, Wangping;Hou, Ying;Zeng, Heping
提出了一种基于工作温度为77 K的量子点（QDs）的高灵敏度光子探测方法。该检测结构基于AlAs/GaAs/AlAs双势垒共振隧道二极管与一层自组装InAs量子点（QD-RTD）相结合。在该结构中，每秒115个光子的光子速率可诱导10na光电流，对应于光激发载流子倍增因子为10(7)。这种高倍增系数是通过量子点诱导记忆效应和QD-RTD结构的共振隧道调谐效应来实现的。(c) 2008年美国物理研究所。
We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77 K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10 nA photocurrent in this structure, corresponding to the photoexcited carrier multiplication factor of 10(7). This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure. (c) 2008 American Institute of Physics.