Femtosecond Investigation of Photophysics of Intersystem Crossing in Terthiophene
Femtosecond Investigation of Photophysics of Intersystem Crossing in Terthiophene
复制标题
三噻吩系间窜越光物理的飞秒研究
DOI:
--
复制
发表时间:
2000
期刊:
影响因子:
--
通讯作者:
S. Rentsch
中科院分区:
文献类型:
--
作者:
J. Yang;W. Paa;M. Hotzel;S. Rentsch
Photophysics of ultrafast intersystem cross ing and trip let yield in 2,2 :5 ,2 -terthiophene (3T) was in ves ti gated in de pend ence of ex ci ta tion wave length by means of femto second time-resolved ab sorp t ion/emis sion spec tros copy. Trip let gen er a tion yield was mon i tored by us ing the prod uct of max i mum and width of the photoinduced trip let ab sorp tion band near 460 nm. We found that trip lets were gen er ated by two dif fer ent pro cesses: (i) the well-known intersystem cross ing from the low est vi bra tional S1 state and (ii) ultrafast intersystem cross ing from an in ter me di ate state gen er ated by photoexcitation. We dis cuss the prob a ble for ma tion mech a nism and the life time of an in ter me di ate state. The re sults sug gest that this in ter me di ate state is a nonplanar con former within the S 1 man i fold; it seems to be re spon si ble for the high ef fec tive trip let gen er a tion.