Anomalous anisotropic magnetoresistance effects in graphene
Anomalous anisotropic magnetoresistance effects in graphene
复制标题
DOI：
10.1063/1.4894519
复制
发表时间：
2014-09
期刊：
影响因子：
1.6
通讯作者：
Yiwei Liu;Rong Yang;Huali Yang;Duoming Wang;Q. Zhan;Guangyu Zhang;Yali Xie;Bin Chen;Run‐Wei Li
中科院分区：
文献类型：
--
作者：
Yiwei Liu;Rong Yang;Huali Yang;Duoming Wang;Q. Zhan;Guangyu Zhang;Yali Xie;Bin Chen;Run‐Wei Li
我们研究了外界刺激(温度、磁场和气体吸附)对多层石墨烯各向异性磁阻的影响。当磁场垂直于石墨烯平面时，石墨烯样品表现出超线性磁阻。在磁场为7T的条件下，在10K下观察到−为33%的非饱和磁阻。对于形状不规则的样品，观察到高温时的两重对称磁阻转变为低温时的一重对称磁阻，这是令人惊讶的。反常的AMR行为可以通过考虑载流子在两个非对称边的各向异性散射和V+(V-)电极的边界来理解，这些边界是气体分子在低温下的活性吸附位置。我们的结果表明，在未来的应用中，可以通过调整吸附、样品形状和电极分布来优化AMR在石墨烯中的应用。
We investigate the effect of external stimulus (temperature, magnetic field, and gases adsorptions) on anisotropic magnetoresistance (AMR) in multilayer graphene. The graphene sample shows superlinear magnetoresistance when magnetic field is perpendicular to the plane of graphene. A non-saturated AMR with a value of −33% is found at 10 K under a magnetic field of 7 T. It is surprisingly to observe that a two-fold symmetric AMR at high temperature is changed into a one-fold one at low temperature for a sample with an irregular shape. The anomalous AMR behaviors may be understood by considering the anisotropic scattering of carriers from two asymmetric edges and the boundaries of V+(V-) electrodes which serve as active adsorption sites for gas molecules at low temperature. Our results indicate that AMR in graphene can be optimized by tuning the adsorptions, sample shape and electrode distribution in the future application.