Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
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DOI：
10.1088/0957-4484/21/30/305201
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发表时间：
2010-07-30
期刊：
影响因子：
3.5
通讯作者：
Waag, A.
中科院分区：
文献类型：
--
作者：
Bergbauer, W.;Strassburg, M.;Waag, A.
我们展示了使用连续通量条件通过金属有机气相外延 (MOVPE) 制造 N 面 GaN 纳米棒。这与迄今为止报道的其他方法形成鲜明对比，这些方法基于远离传统增长机制的增长模式。为了控制纳米棒的位置，使用了 c 面蓝宝石基板上具有密集孔图案的 SiO2 掩模层。具有 InGaN/GaN 异质结构的纳米棒已在无催化剂的情况下生长。观察到高达 25 μ m h(-1) 的高生长速率，并且氢气和氮气之间经过良好调整的载气混合物使均匀的纳米棒直径低至 220 nm，长宽比约为 8:1。纳米棒内的结构质量和缺陷进展通过透射电子显微镜（TEM）测定。通过室温阴极发光 (CL) 测量，可以将 InGaN 量子阱 (QW) 的不同发射能量分配给不同的侧面。
We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes. For position control of nanorods an SiO2 masking layer with a dense hole pattern on a c-plane sapphire substrate was used. Nanorods with InGaN/GaN heterostructures have been grown catalyst-free. High growth rates up to 25 mu m h(-1) were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogen enabled homogeneous nanorod diameters down to 220 nm with aspect ratios of approximately 8:1. The structural quality and defect progression within nanorods were determined by transmission electron microscopy (TEM). Different emission energies for InGaN quantum wells (QWs) could be assigned to different side facets by room temperature cathodoluminescence (CL) measurements.